SINGLE CHANNEL DRIVER

Description The IRS2117, IRS21171, and IRS2118 are high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono­lithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pul

文件：902.78 Kbytes 页数：26 Pages

IRF

SINGLE CHANNEL DRIVER

Description The IRS2117, IRS21171, and IRS2118 are high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono­lithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pul

文件：902.78 Kbytes 页数：26 Pages

IRF

SINGLE CHANNEL DRIVER

Description The IRS2117, IRS21171, and IRS2118 are high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono­lithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pul

文件：902.78 Kbytes 页数：26 Pages

IRF

SINGLE CHANNEL DRIVER

文件：2.13203 Mbytes 页数：26 Pages

INFINEON

英飞凌

SINGLE CHANNEL DRIVER

文件：2.13203 Mbytes 页数：26 Pages

INFINEON

英飞凌

电平移位门极驱动

600 V High Side Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. ·Floating channel designed for bootstrap operation\n ·Fully operational to +600 V\n ·Tolerant to negative transient voltage, dV/dt immune\n ·Gate drive supply range from 10 V to 20 V\n ·Undervoltage lockout for both channels\n ·CMOS Schmitt-triggered inputs with pull-down\n ·Outputs in phase w;

Infineon

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HIGH-SIDE 8SOIC

INFINEON

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HIGH-SIDE 8SOIC

INFINEON

英飞凌