首页 >IRLU3636>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

IW3636

Single-StageLEDDriverwithPFC

Dialog

Dialog

JHV3636

HIGHVOLTAGERECTIFIERASSEMBLY

MicrosemiMicrosemi Corporation

美高森美美高森美公司

LTC3636

5V,12.5ASynchronousStep-DownSilentSwitcherin3mmx3mmLQFN

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

LTC3636

A7-BitCurrentDACwithPMBusInterface

LINERLinear Technology

线性技术公司

LTC3636

DualChannel6A,20VMonolithicSynchronousStep-DownRegulator

LINERLinear Technology

线性技术公司

LTC3636

5V,12.5ASynchronousStep-DownSilentSwitcher2in3mmx3mmLQFN

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

LTC3636

DualChannel6A,20VPolyPhaseStep-DownSilentSwitcher2withDigitalPowerSystemManagement

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

LTC3636

A7-BitCurrentDACwithPMBusInterface

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

LTC3636

5V,15ASynchronousStep-DownSilentSwitcherin3mm×3mmLQFN

FEATURES -LayoutCompatiblewithLTC3310/LTC3311Family -SilentSwitcher®Architecture -UltralowEMIEmissions -HighEfficiency:3mΩNMOSand8mΩPMOS -WideBandwidth,FastTransientResponse -SafelyToleratesInductorSaturationinOverload -VINRange:2.25Vto5.5V -VOUTRange:0

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

PSB-3636

SPLITBOBBINHIGHISOLATIONPOWERTRANSFORMERS

PMI

Premier Magnetics, Inc.

PSB-3636D

SPLITBOBBINHIGHISOLATIONPOWERTRANSFORMERS

PMI

Premier Magnetics, Inc.

PST3636NR

ICforCMOSSystemReset

MITSUMIMITSUMI ELECTRIC CO.,LTD.

美上美三美电机株式会社

PST3636UR

ICforCMOSSystemReset

MITSUMIMITSUMI ELECTRIC CO.,LTD.

美上美三美电机株式会社

PT3636

3.8V~24Voperation

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

PT3636

HighSensitivityUnipolarSwitch

PROLIFICPROLIFIC

旺玖科技旺玖科技股份有限公司

RMQCBA3636DGBA

36-MbitDDR??IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RMQCEA3636DGBA

36-MbitDDR™IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RMQCHA3636DGBA

36-MbitDDR™IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RMQCLA3636DGBA

36-MbitDDR™IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RMQSAA3636DGBA

36-MbitQDR™IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    IRLU3636

  • 功能描述:

    MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
23+
I-Pak
12300
全新原装真实库存含13点增值税票!
询价
IR
20+
TO-251
90000
全新原装正品/库存充足
询价
英飞凌
21+
IPAK
6000
绝对原裝现货
询价
IR
23+
D2-pak
69820
终端可以免费供样,支持BOM配单!
询价
IR
22+
TO-251
32350
原装正品 假一罚十 公司现货
询价
IR
23+
I-Pak
10000
公司只做原装正品
询价
IR
21+
TO-251
50000
全新原装正品现货,支持订货
询价
IR
2022+
I-Pak
12888
原厂代理 终端免费提供样品
询价
IR
21+
TO-251
56000
公司进口原装现货 批量特价支持
询价
更多IRLU3636供应商 更新时间2024-6-19 9:19:00