丝印：LR3915；Package：TO-252；60V N-Channel MOSFET

Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching VDS =100V ID(at VGS=10V)=30A RDS(ON) (at VGS=10V)

文件：460.93 Kbytes 页数：8 Pages

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HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and impr

文件：581.67 Kbytes 页数：11 Pages

IRF

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isc N-Channel MOSFET Transistor

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ISC

无锡固电