Advanced Power MOSFET

BVDSS = 100 V RDS(on) = 0.44Ω ID = 4.7 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.)

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

$GYDQFHG 3RZHU 026)(7

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MOSFET N-CH 100V 4.7A DPAK

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MOSFET N-CH 100V 4.7A DPAK

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