丝印：IRLL110；Package：SOT-223；100V N-Channel MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance •VDS(V) = 100V •RDS(ON)

文件：694.08 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRLL110；Package：SOT-223；100V N-Channel MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance •VDS(V) = 100V •RDS(ON)

文件：694.08 Kbytes 页数：8 Pages

UMW

友台半导体

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Repetitive Avalanche

文件：217.28 Kbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

文件：1.44194 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

100V N-Channel MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Material categorization: for definitions of compliance •VDS(V) = 100V •RDS(ON)

文件：694.08 Kbytes 页数：8 Pages

UMW

友台半导体

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION

文件：358.68 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalan

文件：203.6 Kbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

文件：1.44194 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

文件：1.44194 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, orwave soldering techniq

文件：1.44194 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技