首页 >IRLD014>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

AUIRLL014NTR

AUTOMOTIVEGRADE

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRLR014N

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRLR014N

AdvancedPlanarTechnologyLogic-LevelGateDrive

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRLR014NTR

AdvancedPlanarTechnologyLogic-LevelGateDrive

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRLR014NTRL

AdvancedPlanarTechnologyLogic-LevelGateDrive

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRLR014NTRL

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRLR014NTRR

AdvancedPlanarTechnologyLogic-LevelGateDrive

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUMSCD014H

SchottkyBarrierDiode

ZOWIEZOWIE

智威智威科技股份有限公司

BES014A

InductiveSensors

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

BES014K

InductiveSensors

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

BES014L

InductiveSensors

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

BES014M

InductiveSensors

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

BES014W

InductiveSensors

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

BH014

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亚当科技亚当科技股份有限公司

BIS014C

Multi-FrequencyProcessor

BalluffBalluff Korea Ltd.

巴鲁夫巴鲁夫自动化(上海)有限公司

C-014

DATUM/DUALDATUMFREQUENCY

CMLMICROCML Microcircuits

CML公司

CAP014DG

ZeroLossAutomaticXCapacitorDischargeIC

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

CAP014DG

Zero1LossAutomaticXCapacitorDischargeIC

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

CAP014DG

ZeroLossAutomaticXCapacitorDischargeIC

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

CCO-014

HCMOS/TTL

CRYSTEKCRYSTAL

Crystek Corporation

详细参数

  • 型号:

    IRLD014

  • 功能描述:

    MOSFET N-Chan 60V 1.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INTERNATIONA
05+
原厂原装
4238
只做全新原装真实现货供应
询价
IR
2016+
DIP4
6528
房间原装进口现货假一赔十
询价
IR
23+
DIP-4
8238
询价
IR
16+
原厂封装
1816
原装现货假一罚十
询价
IOR
05+
DIP-4P
100
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
23+
DIP-4
8560
受权代理!全新原装现货特价热卖!
询价
IR
23+
HD-1
9888
专做原装正品,假一罚百!
询价
IR
23+
65480
询价
IR
2020+
DIP-4
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多IRLD014供应商 更新时间2024-6-5 15:46:00