HEXFET Power MOSFET

Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ●

文件：234.38 Kbytes 页数：9 Pages

IRF

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. • Complementary to KTA1270.

文件：244.59 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

TO-92 Plastic-Encapsulate Transistors (NPN)

TRANSISTOR (NPN) FEATURES ● General Purpose Application Switching Application

文件：300.26 Kbytes 页数：1 Pages

TGS

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：127.18 Kbytes 页数：1 Pages

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