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IRL3705N

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:106.74 Kbytes 页数:8 Pages

IRF

IRL3705N

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤10mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio

文件:339.15 Kbytes 页数:2 Pages

ISC

无锡固电

IRL3705N/L

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:188.49 Kbytes 页数:10 Pages

IRF

IRL3705NLPBF

HEXFET Power MOSFET

文件:294.11 Kbytes 页数:10 Pages

IRF

IRL3705NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ex

文件:449.99 Kbytes 页数:9 Pages

Infineon

英飞凌

IRL3705NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:2.39581 Mbytes 页数:8 Pages

IRF

IRL3705NS

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:188.49 Kbytes 页数:10 Pages

IRF

IRL3705NSPBF

HEXFET Power MOSFET

文件:294.11 Kbytes 页数:10 Pages

IRF

IRL3705Z

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件:296.88 Kbytes 页数:12 Pages

IRF

IRL3705ZL

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件:296.88 Kbytes 页数:12 Pages

IRF

技术参数

  • OPN:

    IRL3705ZLPBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO262

  • VDS max:

    55 V

  • RDS (on) @10V max:

    8 mΩ

  • RDS (on) @4.5V max:

    12 mΩ

  • ID @25°C max:

    86 A

  • QG typ @4.5V:

    40 nC

  • Polarity:

    N

  • VGS(th) min:

    1 V

  • VGS(th) max:

    3 V

  • VGS(th):

    2 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
2015+
TO-262
12500
全新原装,现货库存长期供应
询价
IR
24+
TO-262
8866
询价
IR
23+
TO-262-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
INFINEON
25+
TO-262
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
询价
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
Infineon Technologies
2022+
TO-262-3,长引线,I2Pak,TO-26
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IR
23+
TO-262-3
24710
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
IR
2023+
TO-262
11000
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更多IRL3705供应商 更新时间2025-11-17 11:04:00