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IRGP30B60KD

NPT IGBT

DESCRIPTION ·LowDiodeVF ·10μsShortCircuitCapability ·UltrasoftDiodeReverseRecoveryCharacteristics APPLICATIONS ·LowEMI ·RuggedTransientPerformance ·BenchmarkEfficiencyforMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRGP30B60KD-E

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-247ADPackage Benefits •BenchmarkEfficiencyforMotorControl

IRF

International Rectifier

IRGP30B60KD-EP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-247ADPackage •Lead-Free Benefits •BenchmarkEfficiencyfor

IRF

International Rectifier

IRGP30B60KD-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRGP30B60KD-EPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRGP30B60KD-EP

Package:TO-247-3;包装:卷带(TR) 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 60A 304W TO247AD

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    IRGP30B60KD

  • 制造商:

    International Rectifier

  • 功能描述:

    INSULATED GATE BIPOLAR TRANSISTOR W/ ULTRAFAST SOFT RECOVERY - Bulk

供应商型号品牌批号封装库存备注价格
IR
23+
TO-247
50000
全新原装正品现货,支持订货
询价
IR
21+
TO247
10000
原装现货假一罚十
询价
IR
22+
TO-247
6000
终端可免费供样,支持BOM配单
询价
IR
24+
NA/
17138
原装现货,当天可交货,原型号开票
询价
IR
23+
TO247
8000
专注配单,只做原装进口现货
询价
IR
23+
TO247
8000
专注配单,只做原装进口现货
询价
IR
23+
TO247
7000
询价
IR
24+
TO-247-3
100
询价
DISCRETE
25
IR
4580
询价
IR
2015+
TO-247AC
12500
全新原装,现货库存长期供应
询价
更多IRGP30B60KD供应商 更新时间2025-7-19 10:59:00