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IRG4PC30U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

UltraFastSpeedIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •

IRF

International Rectifier

IRG4PC30U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC30UD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ult

IRF

International Rectifier

IRG4PC30UD

IGBT

DESCRIPTION ·LowSaturationVoltage ·Anti-ParallelUltraFastDiode ·AvalancheCapability ·InternationalStandardPackage APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries ·WeldingMachines

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRG4PC30UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC30UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4PC30UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC30UPBF

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT

UltraFastSpeedIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Genera

IRF

International Rectifier

IRG4PC30W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc

IRF

International Rectifier

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