IRG4BC20KDS中文资料IRF规格书PDF资料数据手册-114ic电子网

IRG4BC20KDS中文资料PDF规格书

厂商型号	IRG4BC20KDS
功能描述	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
文件大小	222.96 Kbytes
页面数量	10 页
生产厂商	International Rectifier
企业简称	IRF【英飞凌】
中文名称	英飞凌科技公司官网
原厂标识
数据手册	下载地址一下载地址二
更新时间	2024-5-1 10:30:00

Short Circuit Rated UltraFast IGBT

Features

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard D2Pak package

Benefits

• Latest generation 4 IGBTs offer highest power density motor controls possible.

• HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.

• This part replaces the IRGBC20KD2-S and IRGBC20MD2-S products.

• For hints see design tip 97003.

型号：
IRG4BC20KDS
制造商：
IRF
制造商全称：
International Rectifier
功能描述：
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)