| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFZ48R | Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：1.06484 Mbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
IRFZ48R | Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：136.91 Kbytes 页数：8 Pages | IRF | IRF | |
IRFZ48R | Power MOSFET 文件：200.28 Kbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：176.08 Kbytes 页数：10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：961.63 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：961.63 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A ) Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：255.82 Kbytes 页数：10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：1.06484 Mbytes 页数：9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFET짰 Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：167.17 Kbytes 页数：8 Pages | IRF | IRF | ||
Power MOSFET FEATURES • Advanced process technology • Dynamic dV/dt • 175 °C operating temperature • Fast switching • Fully avalanche rated • Drop in replacement of the IRFZ48, SiHFZ48 for linear / audio applications • Material categorization: for definitions of compliance please see www.vishay.com/do 文件：275.14 Kbytes 页数：11 Pages | VishayVishay Siliconix 威世科技 | Vishay |
技术参数
- Package：
Single
- Ch：
D2PAK (TO-263)
- VDS (V)：
N
- VGS (V)：
60
- RDS(on) @1.2V (Ω)：
20
- Qg @4.5V (nC)：
0.018
- Qgs (nC)：
110
- Qgd (nC)：
29
- ID Max. (A)：
36
- PD Max. (W)：
50
- VGS(th) Min. (V)：
190
- Rg Typ. (Ω)：
2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220AB |
8866 |
询价 | |||
IR |
05+ |
原厂原装 |
15645 |
只做全新原装真实现货供应 |
询价 | ||
IR |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
NEXPERIA/安世 |
23+ |
SOT223 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY |
25+ |
TO-220 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
21+ |
TO220 |
10000 |
原装现货假一罚十 |
询价 | ||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay Siliconix |
23+ |
TO2203 |
9000 |
原装正品，支持实单 |
询价 | ||
Vishay Siliconix |
2022+ |
TO-220-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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