Advanced Power MOSFET

文件：259.589 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ● Lower RDS(ON) : 0.101Ω (Typ.)

文件：233.97 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

HEXFET Power MOSFET

文件：193.79 Kbytes 页数：8 Pages

IRF

Repetitive Avalanche Rated

文件：1.14788 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

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