IRFWI540A

Advanced Power MOSFET

IRFY540

N-ChannelMOSFETinaHermeticallysealed

IRL540

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

IRL540

PowerMOSFET

IRL540

PowerMOSFET

IRL540

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

IRL540A

AdvancedPowerMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=100V ♦LowerRDS(ON):0.046Ω(Typ.)

IRL540A

HEXFETPowerMOSFET

IRL540N

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRL540N

N-ChannelMOSFETTransistor

•DESCRITION •Itisintendedforgeneralpurposeswitchingapplications •FEATURES •Lowdrain-sourceon-resistance: RDS(on)≤44mΩ(max) •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoper