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IRFU9110PBF

HEXFET Power MOSFET

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IRF

International Rectifier

IRFU9110PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半导体

IRFU9110PbF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9110PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9110PBF

P-Channel 100 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFU9110PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFU9110PBF

Dynamic dV/dt Rating

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    IRFU9110

  • 功能描述:

    MOSFET P-Chan 100V 3.1 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
TO-251
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
IR
23+
TO-251
5050
原厂原装正品
询价
IR
24+
TO 251
160916
明嘉莱只做原装正品现货
询价
IR
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
IR
24+
TO-251
15000
询价
IR
23+
TO-251
9896
询价
IR
24+/25+
132
原装正品现货库存价优
询价
IR
06+
TO-251
12000
原装
询价
IR
23+
原厂原装
3000
全新原装
询价
IR
17+
TO-251
6200
100%原装正品现货
询价
更多IRFU9110供应商 更新时间2025-5-21 14:16:00