Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR9110, SiHFR9110);

Vishay

威世科技

3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs

Renesas

瑞萨

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：3.89837 Mbytes 页数：7 Pages

KERSEMI

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：1.8069 Mbytes 页数：10 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.37621 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：3.89222 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9110, SiHFR9110) • Straight Lead (IRFU9110, SiHFU9110) • Available in Tape and Reel • P-Channel • Fast Switching

文件：792.48 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：845.12 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世科技

Dynamic dV/dt Rating

文件：3.76945 Mbytes 页数：7 Pages

KERSEMI

P-Channel 100 V (D-S) MOSFET

文件：1.68872 Mbytes 页数：7 Pages

VBSEMI

微碧半导体