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MDF9N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDP9N60

N-ChannelMOSFET600V,9A,0.75(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP9N60TH

N-ChannelMOSFET600V,9A,0.75(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP9N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTN9N60BFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

PHB9N60E

PowerMOStransistorsAvalancheenergyrated

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PHB9N60E

PowerMOStransistorsAvalancheenergyrated

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PHB9N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHP9N60E

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

PHP9N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRFSL9N60A

  • 功能描述:

    MOSFET N-Chan 600V 9.2 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
TO-220
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
IR
24+
TO 262
161069
明嘉莱只做原装正品现货
询价
IR
24+
TO-262
501167
免费送样原盒原包现货一手渠道联系
询价
IR
2015+
TO-262
12500
全新原装,现货库存长期供应
询价
IR
23+
TO-262
7600
全新原装现货
询价
IR
24+
TO-262
8866
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
2022+
11
全新原装 货期两周
询价
IR
23+
TO-262
50000
全新原装正品现货,支持订货
询价
IR
22+
TO-220
20000
保证原装正品,假一陪十
询价
更多IRFSL9N60A供应商 更新时间2025-5-19 14:00:00