Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A)

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Motor Control ● Uninterru

文件：245.14 Kbytes 页数：11 Pages

IRF

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：189.42 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET® Power MOSFET

Benefits\n● Low Gate-to-Drain Charge to Reduce Switching Losses\n● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)\n● Fully Characterized Avalanche Voltage and Current

Infineon

英飞凌

HEXFET짰 Power MOSFET

文件：667.87 Kbytes 页数：12 Pages

IRF