Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Ultra low on-resistance • Very low thermal resistance • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?9991

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designe

文件：107.54 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET

Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Advanced Process Technology Ultra Low

文件：367.52 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：2.55214 Mbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

文件：1.76999 Mbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.7043 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A??

VDSS= 60V RDS(on)= 5.5mΩ ID= 130A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF

文件：210.12 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：168.58 Kbytes 页数：8 Pages

IRF

类型：N沟道 漏源电压(Vdss)：55V 连续漏极电流(Id)：110A 功率(Pd)：200W 导通电阻(RDS(on)@Vgs,Id)：8mΩ@10V,59A N沟道,55V,110A,8mΩ@10V

文件：612.848 Kbytes 页数：9 Pages

INFINEON

英飞凌

PDF上传者：深圳市亚泰盈科电子有限公司

Power MOSFET

文件：1.68986 Mbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司