HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

文件：1.76999 Mbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A??

VDSS= 60V RDS(on)= 5.5mΩ ID= 130A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF

文件：210.12 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：168.58 Kbytes 页数：8 Pages

IRF

N-CHANNEL POWER MOSFETS

文件：354.18 Kbytes 页数：6 Pages

Samsung

三星

N-CHANNEL POWER MOSFETS

文件：354.18 Kbytes 页数：6 Pages

Samsung

三星

N-CHANNEL POWER MOSFETS

文件：354.18 Kbytes 页数：6 Pages

Samsung

三星

N-CHANNEL POWER MOSFETS

文件：354.18 Kbytes 页数：6 Pages

Samsung

三星

31A, 100V, 0.077 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：104.33 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclud

文件：1.82938 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not

文件：1.00904 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司