N-CHANNEL POWER MOSFETS

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Samsung

三星

isc N-Channel MOSFET Transistor

文件：265.38 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8.3A@ TC=25℃ · Drain Source Voltage -VDSS= 80V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.9 Kbytes 页数：2 Pages

ISC

无锡固电

Quadrature Hybrid, 20 - 40 MHz

Features • Octave Bandwidth • 3° Maximum Phase Deviation from 90° • Low loss: 0.5 dB Max. • Impedance: 50 Ohms Nom. • Input Power: 5 W. Max. @ 25°C Derated to 1 W. @ 100°C • Typical Phase Linearity: 3° from Straight Line • MIL-STD-202 Screening Available

文件：172.42 Kbytes 页数：2 Pages

MACOM