HEXFET Power MOSFET

VDSS = 100V RDS(on) = 24mΩ ID = 47A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：531.52 Kbytes 页数：8 Pages

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HEXFET Power MOSFET

VDSS = 100V RDS(on) = 24mΩ ID = 47A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：169.9 Kbytes 页数：8 Pages

IRF

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

文件：44.9 Kbytes 页数：1 Pages

IXYS

艾赛斯

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

文件：44.9 Kbytes 页数：1 Pages

IXYS

艾赛斯

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ● Fast switching times ● LOW RDS(on) HDMOS™ process ● Rugged polyslllcon gate cell structure ● Excellent high voltage stability ● Low input capacitance ● Improved high temperature reliability APPLICATIONS ● Switching power supplies ● Motor controls ● Audio Amplifiers ● Inver

文件：44.9 Kbytes 页数：1 Pages

IXYS

艾赛斯

HEXFET Power MOSFET

文件：171.5 Kbytes 页数：9 Pages

IRF

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for    External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Avai

文件：898.94 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for    External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Avai

文件：898.94 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

SMPS MOSFET

文件：188.75 Kbytes 页数：9 Pages

IRF

Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Low Trr and Soft Diode Recovery ● High Performance Optimised Anti-parallel Diode Ap

文件：91.77 Kbytes 页数：8 Pages

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