Power MOSFET

FEATURES • SuperFast body diode eliminates the need for external diodes in ZVS applications • Low gate charge results in simple drive requirement • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categorization

文件：234.69 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • SuperFast Body Diode Eliminates the Need    For External Diodes in ZVS Applications • Low Gate Charge Results in Simple Drive    Requirement • Enhanced dV/dt Capabilities Offer Improved    Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise    Immunity • Compliant

文件：845.59 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • SuperFast body diode eliminates the need for external diodes in ZVS applications • Low gate charge results in simple drive requirement • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categorization

文件：234.69 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • SuperFast Body Diode Eliminates the Need    For External Diodes in ZVS Applications • Low Gate Charge Results in Simple Drive    Requirement • Enhanced dV/dt Capabilities Offer Improved    Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise    Immunity • Compliant

文件：845.59 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Low Trr and Soft Diode Recovery ● High Performance Optimised Anti-parallel Diode Ap

文件：118.43 Kbytes 页数：8 Pages

IRF

iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.32Ω (MAX) • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：444.97 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

Power MOSFET FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)

文件：162.12 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simple drive requirement • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categorizati

文件：237.92 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

SMPS MOSFET

FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simple drive requirements. • Enhanced dV/dt capabilities offer improved ruggedness. • Higher Gate voltage threshold offers improved noise immunity. APPLICATIONS • Zero

文件：197.26 Kbytes 页数：9 Pages

IRF

Power MOSFET

FEATURES • Superfast body diode eliminates the need for external diodes in ZVS applications • Lower gate charge results in simple drive requirement • Enhanced dV/dt capabilities offer improved ruggedness • Higher gate voltage threshold offers improved noise immunity • Material categorizati

文件：237.92 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司