IRFIBF30G中文资料威世科技数据手册PDF规格书
IRFIBF30G规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
产品属性
- 型号:
IRFIBF30G
- 功能描述:
MOSFET N-Chan 900V 1.9 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
3208 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
VISHAY/威世 |
24+ |
TO220F |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2016+ |
TO220 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
VISHAY/威世 |
11+ |
TO-220F |
177 |
询价 | |||
VISHAY |
25+23+ |
TO220F |
8856 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY/威世 |
24+ |
TO-220F |
177 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
24+ |
TO-220F |
200 |
询价 | |||
IR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 | ||
VISHAY进 |
24+ |
TO-220F |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
VISHAY/威世 |
24+ |
TO220F |
9600 |
原装现货,优势供应,支持实单! |
询价 |