Integrated Half-Bridge Package

Description This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge onfiguration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge,

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IRF

150V 双 N 通道数字音频 HEXFET 功率 MOSFET，采用 TO-220 全封装（Iso）无铅无卤素封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 双 N 通道 MOSFET\n• 集成半桥封装\n• 针对 D 类音频放大器应用进行了优化\n• 低Qrr，可提高THD效率并改善效率\n• 低Qg和Qsw，可提高THD效率并改善效率\n ;

Infineon

英飞凌

isc Triacs

FEATURES · With TO-3P package · Suitable for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light dimmers, motor speed controllers etc

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ISC

无锡固电

Quad AND/OR Select Gate

[IK Semiconductor] The IW4019B types consist of four AND/OR select gate configurations, each consisting of two 2-input AND gates driving a single 2-input gate. Selection is accomplished by control bits Sa and Sb .In addition to selection of either channel A or channel B information, the control b

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ETCList of Unclassifed Manufacturers

未分类制造商

Operating Voltage Range

The IW4019B types consist of four AND/OR select gate configurations, each consisting of two 2-input AND gates driving a single 2-input gate. Selection is accomplished by control bits Sa and Sb .In addition to selection of either channel A or channel B information, the control bits can be applied s

文件：180.64 Kbytes 页数：5 Pages

IKSEMICON