IRFI4019HG-117P中文资料IRF数据手册PDF规格书

描述 Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge onfiguration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

特性 Features

• Integrated Half-Bridge Package

• Reduces the Part Count by Half

• Facilitates Better PCB Layout

• Key Parameters Optimized for Class-D

Audio Amplifier Applications

• Low RDS(ON) for Improved Efficiency

• Low Qg and Qsw for Better THD and

Improved Efficiency

• Low Qrr for Better THD and Lower EMI

• Can Delivery up to 200W per Channel into

8Ω Load in Half-Bridge Configuration

Amplifier

• Lead-Free Package

• Halogen-Free