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IRFR024

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR024

PowerMOSFET

FEATURES •DynamicdV/dtrating •Surface-mount(IRFR024,SiHFR024) •Straightlead(IRFU024,SiHFU024) •Availableintapeandreel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半导体

IRFR024

N-ChannelEnhancementModeMOSFET

Description TheIRFR024NTusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=60VID=30A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRFR024A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR024N

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=17A??

IRF

International Rectifier

IRFR024N

UltraLowOn-Resistance

Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Ultr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR024N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR024N

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRFR024NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFR024NPBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    IRFF024

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    60V, N-CHANNEL

供应商型号品牌批号封装库存备注价格
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
22+
TO-252
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-252
8000
只做原装现货
询价
IR
23+
TO-252
7000
询价
INTERSIL
24+
TO-39
1931
询价
HAR
06+
原厂原装
4244
只做全新原装真实现货供应
询价
IOR
24+
CAN3
5000
原装现货假一罚十
询价
HARRIS
23+
CAN3
5000
原装正品,假一罚十
询价
HAR
23+
CAN
13550
优势库存
询价
IR
24+
SMD
4
“芯达集团”专营军工百分之百原装进口
询价
更多IRFF024供应商 更新时间2025-7-16 9:02:00