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IRFL210PBF

HEXFET짰PowerMOSFET

VDSS=200V,RDS(on)=1.5Ohm,ID=0.96A Lead-Free

IRF

International Rectifier

IRFL210PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec

VishayVishay Siliconix

威世科技威世科技半导体

IRFL210TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec

VishayVishay Siliconix

威世科技威世科技半导体

IRFL210TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec

VishayVishay Siliconix

威世科技威世科技半导体

IRFL210TRPBF

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFL210TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFL210TRPBF-TP

N-ChannelMOSFET200V,6.0A,0.65Q

Features ©Vos=200v +o=60A +Rosin50650@Ves=10V.

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

IRFM210

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFM210A

AdvancedPowerMOSFET(200V,1.5ohm,0.77A)

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFM210B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    IRFE210

  • 制造商:

    International Rectifier

  • 功能描述:

    TRANS MOSFET N-CH 200V 2.25A 18PIN LCC - Bulk

供应商型号品牌批号封装库存备注价格
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
22+
LCC18
6000
终端可免费供样,支持BOM配单
询价
IR
23+
LCC18
8000
只做原装现货
询价
IR
23+
LCC18
7000
询价
IR
2017+
LCC18
689
原装正品,诚信经营
询价
CHINA
23+
LCC-18
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
22+
5000
询价
IR
24+
N/A
90000
原厂正规渠道现货、保证原装正品价格合理
询价
IR
24+
30
全新原装
询价
IR
N/A
N/A
100
军工品,原装正品
询价
更多IRFE210供应商 更新时间2025-5-22 10:29:00