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IRFNL210B

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFR210

PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=2.6A)

DESCRIPTION ThirdGenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraigh

IRF

International Rectifier

IRFR210

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半导体

IRFR210

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR210

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR210

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR210,SiHFR210) •Straightlead(IRFU210,SiHFU210) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半导体

IRFR210A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR210B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFR210B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.7A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR210BTF

N-channelEnhancementModePowerMOSFET

Features VDS=200V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

详细参数

  • 型号:

    IRFE210

  • 制造商:

    International Rectifier

  • 功能描述:

    TRANS MOSFET N-CH 200V 2.25A 18PIN LCC - Bulk

供应商型号品牌批号封装库存备注价格
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
22+
LCC18
6000
终端可免费供样,支持BOM配单
询价
IR
23+
LCC18
8000
只做原装现货
询价
IR
23+
LCC18
7000
询价
IR
2017+
LCC18
689
原装正品,诚信经营
询价
CHINA
23+
LCC-18
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
22+
5000
询价
IR
24+
N/A
90000
原厂正规渠道现货、保证原装正品价格合理
询价
IR
24+
30
全新原装
询价
IR
N/A
N/A
100
军工品,原装正品
询价
更多IRFE210供应商 更新时间2025-7-25 9:03:00