isc N-Channel MOSFET Transistor

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ISC

无锡固电

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2.7A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 30 A RDS(ON)

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BYCHIP

百域芯