IRFB3207Z

N-Channel MOSFET Transistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤4.1mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

IRFB3207Z

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装; \n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size dependent)\n• Capable of being wave soldered\n;

IRFB3207ZG

N-Channel MOSFET Transistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤4.1mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

IRFB3207ZGPBF

HEXFET

Power MOSFET

Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching ●HardSwitchedandHighFrequencyCircuits Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●En

IRFB3207ZPBF

HEXFET Power MOSFET

Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA

IRFB3207ZG

75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装; \n优势:\n• 符合 RoHS\n;