Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R

NJS

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap

文件：169.14 Kbytes 页数：6 Pages

IRF

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap

文件：169.14 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

文件：1.6845 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技