| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF9530S | Repetitive avalanche rated DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro 文件:184.57 Kbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF9530S | isc P-Channel Mosfet Transistor FEATURES ·Drain Current : ID= -12A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D 文件:317.41 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRF9530S | Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid 文件:198.36 Kbytes 页数:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF9530S | P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS 文件:22.71 Kbytes 页数:2 Pages | SEME-LAB | SEME-LAB | |
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid 文件:198.36 Kbytes 页数:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET짰 Power MOSFET FEATURES • Surface Mount • Available in Tape And Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Lead-Free 文件:1.00929 Mbytes 页数:9 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro 文件:175.84 Kbytes 页数:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS 文件:22.71 Kbytes 页数:2 Pages | SEME-LAB | SEME-LAB | ||
Power MOSFET 文件:198.36 Kbytes 页数:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件:198.36 Kbytes 页数:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号:
IRF9530S
- 功能描述:
MOSFET P-Chan 100V 12 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO-263 |
9450 |
原装正品,实单请联系 |
询价 | ||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
06+ |
TO-263 |
5000 |
自己公司全新库存绝对有货 |
询价 | ||
IR |
24+ |
原厂封装 |
1046 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
TO-263 |
5000 |
原装正品,假一罚十 |
询价 | ||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
ir |
23+ |
220tie |
12000 |
全新原装假一赔十 |
询价 | ||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
18+ |
TO-263 |
41200 |
原装正品,现货特价 |
询价 |
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