IRF8707

N-Channel Enhancement Mode MOSFET

Description TheIRF8707usesadvancedtrench technologytoprovideexcellentRDS(ON),lowgate chargeandoperationwithgatevoltagesaslow as4.5V.Thisdeviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=30VID=15A RDS(ON)

IRF8707PBF

Marking：F8707；Package：SO-8；HEXFET Power MOSFET

Description TheIRF8707PbFincorporatesthelatestHEXFETPowerMOSFETSiliconTechnologyintotheindustrystandardSO-8package.TheIRF8707PbFhasbeenoptimizedforparametersthatarecriticalinsynchronousbuckoperationincludingRds(on)andgatechargetoreducebothconductionandswit

IRF8707TR

Marking：IRF8707；Package：SOP-8；30V N-Channel MOSFET

Description TheUMWIRF8707TRhasbeenoptimizedfor parametersthatarecriticalinsynchronousbuck operationincludingRds(on)andgatechargetoreduce bothconductionandswitchinglosses.The reducedtotallossesmakethisproductidealfor highefficiencyDC-DCconvertersthatpowert

IRF8707TRPBF-TP

N-Channel Enhancement Mode Power MOSFET

GENERALFEATURES ®Vos=30Vio=12A Roscn

IRF8707GPBF

Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

IRF8707GTRPBF

Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

IRF8707PBF

Marking：F8707；Package：SO-8；Fully Characterized Avalanche Voltage and Current

IRF8707PBF_15

Fully Characterized Avalanche Voltage and Current

IRF8707TRPBF

HEXFET

짰 Power MOSFET