N-Channel Enhancement Mode MOSFET

Description The IRF8707 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =15A RDS(ON)

文件：552.16 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：IRF8707；Package：SOP-8；30V N-Channel MOSFET

Description The UMW IRF8707TR has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power t

文件：498.04 Kbytes 页数：8 Pages

UMW

友台半导体

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 5V gate-drive voltage (called Logic level)\n• Industry standard surface-mount package\n• Capable of being wave-soldered;

Infineon

英飞凌

丝印：F8707；Package：SO-8；HEXFET Power MOSFET

Description The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are critical in synchronous buck operationincluding Rds(on) and gate charge to reduce both conduction and swit

文件：248.94 Kbytes 页数：9 Pages

IRF

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ® Vos =30Vio=12A Roscn

文件：2.0017 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

文件：252.53 Kbytes 页数：9 Pages

IRF

Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

文件：252.53 Kbytes 页数：9 Pages

IRF

丝印：F8707；Package：SO-8；Fully Characterized Avalanche Voltage and Current

文件：254.47 Kbytes 页数：9 Pages

IRF

Fully Characterized Avalanche Voltage and Current

文件：254.47 Kbytes 页数：9 Pages

IRF

HEXFET

짰 Power MOSFET

文件：254.47 Kbytes 页数：9 Pages

IRF