HEXFET Power MOSFET

Applications • High frequency DC-DC converters • UPS and Motor Control Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective Coss to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage an

文件：494.75 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

文件：338.69 Kbytes 页数：2 Pages

ISC

无锡固电

采用 TO-220 封装的 100V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

SMPS MOSFET

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current Typical RDS(on)= 12mΩ aplications High frequency DC-DC converters UPS and Motor Control

文件：223.28 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current Typical RDS(on)= 12mΩ applications High frequency DC-DC converters UPS and Motor Control

文件：220.46 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Typical RDS(on) = 12mΩ Applications ● High f

文件：130.41 Kbytes 页数：8 Pages

IRF

SMPS MOSFET

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current Typical RDS(on)= 12mΩ aplications High frequency DC-DC converters UPS and Motor Control

文件：223.28 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current Typical RDS(on)= 12mΩ applications High frequency DC-DC converters UPS and Motor Control

文件：220.46 Kbytes 页数：10 Pages

IRF

SMPS MOSFET

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current Typical RDS(on)= 12mΩ aplications High frequency DC-DC converters UPS and Motor Control

文件：223.28 Kbytes 页数：10 Pages

IRF

Isc N-Channel MOSFET Transistor

文件：300.33 Kbytes 页数：2 Pages

ISC

无锡固电