SMPS MOSFET

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current Typical RDS(on)= 12mΩ aplications High frequency DC-DC converters UPS and Motor Control

文件：223.28 Kbytes 页数：10 Pages

IRF

Isc N-Channel MOSFET Transistor

文件：300.33 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current Typical RDS(on)= 12mΩ applications High frequency DC-DC converters UPS and Motor Control

文件：220.46 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Infineon

英飞凌