POWER MOSFET

文件：186.88 Kbytes 页数：6 Pages

SUNTAC

MOSFET

GlobalSemi

环球半导体

POWER MOSFET

文件：186.88 Kbytes 页数：6 Pages

SUNTAC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and PFC Circuits..

文件：296.23 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFAST IGBT

Features • International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB • Medium frequency IGBT • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • Uninterruptible power supplies (UPS) •

文件：84.88 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFAST IGBT Lightspeed Series

Features • International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB • High frequency IGBT • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • Uninterruptible power supplies (UPS) • Switc

文件：79.19 Kbytes 页数：2 Pages

IXYS

艾赛斯