IRF7507

Power MOSFET(Vdss=-20V)

N-ChP-Ch VDSS20V-20V RDS(on)0.135Ω0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefast

IRF7507PBF

HEXFET짰Power MOSFET

N-ChP-Ch VDSS20V-20V RDS(on)0.135Ω0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefast

IRF7509

Power MOSFET(Vdss=-30V)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF7509

丝印：IRF7509；Package：SOP-8；30V NP-Channel Enhancement Mode MOSFET

Description TheIRF7509usesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeaturesVDS=30VID=6A RDS(ON)

IRF7509TR

Power MOSFET(Vdss=-30V)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF750A

Advanced Power MOSFET

BVDSS=400V RDS(on)=0.3Ω ID=15A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowRDS(ON):0.254Ω

IRF7501PBF

Ulrtra Low On-Resistance

IRF7501PBF_15

Ulrtra Low On-Resistance

IRF7501TRPBF

Generation V Technology

IRF7503

30V 双 N 通道 HEXFET Power MOSFET, 采用 Micro 8封装; \n优势:\n• 符合 RoHS\n• 快速开关\n• 纤薄外形（小于1.1毫米）\n• 双 N 通道 MOSFET\n;