IRF7501

Power MOSFET(Vdss=20V, Rds(on)=0.135ohm)

VDSS=20V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowe

IRF7501PBF

Generation V Technology Ulrtra Low On-Resistance

VDSS=20V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowe

IRF7503

Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)

VDSS=30V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7503PBF

HEXFET짰 Power MOSFET

VDSS=30V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7503TR

Generation V Technology

VDSS=30V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7504

Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)

VDSS=-20V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7504PBF

HEXFET Power MOSFET

VDSS=-20V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7506

Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm)

VDSS=-30V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7506

HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)

VDSS=-30V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7506PBF

HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)

VDSS=-30V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow