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IRF7341QTRPBF

Advanced Process Technology

Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341TR

HEXFET짰 Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF7341TR

Marking:IRF7341;Package:SOP-8;Generation V Technology

TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IRF7341TR

Marking:IRF7341;Package:SOP-8;MOSFET

Description TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboard

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRF7341TRPBF

Dual N-Channel 60 V (D-S) 175 째C MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF7342

Power MOSFET

VDSS=-55V RDS(on)=0.105Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPo

IRF

International Rectifier

IRF7342

Marking:IRF7342;Package:SOP-8;Dual P-Channel MOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=-55V RDS(ON)105m(VGS=-10V) Features RDS(ON)170m(VGS=-4.5V) TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharac

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IRF7342

Dual P-Channel MOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=-55V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRF7342TR

Marking:IRF7342;Package:SOP-8;Dual P-Channel MOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=-55V RDS(ON)105m(VGS=-10V) Features RDS(ON)170m(VGS=-4.5V) TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharac

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IRF7342TR

Marking:IRF7342;Package:SOP-8;Dual P-Channel MOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=-55V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

详细参数

  • 型号:

    IRF734

  • 功能描述:

    MOSFET N-CH 450V 4.9A TO-220AB

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    -

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
IR
24+
T0-220
500771
免费送样原盒原包现货一手渠道联系
询价
IR
24+
TO-220-3
8866
询价
IR
23+
TO-220
35890
询价
IR
05+
原厂原装
1184
只做全新原装真实现货供应
询价
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
询价
IR
23+
TO-220AB
8600
全新原装现货
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IR/FSC
1738+
TO-220
8529
科恒伟业!只做原装正品,假一赔十!
询价
IOR
21+
TO220
12588
原装正品,自己库存 假一罚十
询价
IR/VISHAY
20+
D2-PAK
36900
原装优势主营型号-可开原型号增税票
询价
更多IRF734供应商 更新时间2025-5-24 17:06:00