Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：113.76 Kbytes 页数：9 Pages

IRF

丝印：IRF7303；Package：SOP-8；Dual N-Channel MOSFET

Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON) 50m (VGS = -10V) RDS(ON) 80m (VGS = -4.5V) Features The SOP-8 has been modied through a customizec leadframe for enhanced thermal characteristic

文件：446.3 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7303；Package：SOP-8；Dual N-Channel MOSFET

Features Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON)

文件：396.57 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 UIS Tested • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC

文件：1.16241 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：F7303；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Ros(oN =35 mO@VGS=10V ® Ros =45 mO@VGS=4.5V ‘@ Super high density cell design for extremely low Ros(oN) ® Exceptional on-resistance and maximum DC curent capability

文件：2.19004 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子