IRF630中文资料N沟道200 V、0.35 Ohm典型值、9 A功率MOSFET,DPAK封装数据手册ST规格书
IRF630规格书详情
描述 Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
特性 Features
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Gate charge minimized
技术参数
- 制造商编号
:IRF630
- 生产厂家
:ST
- Package
:TO-220AB
- Grade
:Industrial
- VDSS(V)
:200
- RDS(on)_max(@ VGS=10V)(Ω)
:0.4
- Drain Current (Dc)_max(A)
:9
- PTOT_max(W)
:75
- Qg_typ(nC)
:31
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
三年内 |
1983 |
只做原装正品 |
询价 | |||
ST(意法半导体) |
NA |
4586 |
全新原装正品现货可开票 |
询价 | |||
IR |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
询价 | ||
ST/意法 |
22+ |
TO-220AB |
14100 |
原装正品 |
询价 | ||
ST |
23+24 |
TO-220 |
49820 |
主营全系列二三极管、MOS场效应管、 |
询价 | ||
IR |
06+ |
TO-220 |
7000 |
全新原装 绝对有货 |
询价 | ||
IR |
2402+ |
TO2203 |
8324 |
原装正品!实单价优! |
询价 | ||
IR |
24+ |
TO-220AB |
27500 |
原装正品,价格最低! |
询价 | ||
STM |
24+/25+ |
TO-220AB |
126450 |
原装正品现货库存价优 |
询价 | ||
IR |
25+ |
TO220 |
3000 |
全新原装、诚信经营、公司现货销售 |
询价 |