| 零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HEXFETPowerMOSFET DESCRIPTION ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialap | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=5.2A) VDSS=200V RDS(on)=0.80Ω ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IC.IR |
23+ |
SMD220 |
58990 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
23+ |
D2-PAK |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
23+ |
D2-PAK |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
24+ |
D2-PAK |
60000 |
全新原装现货 |
询价 | ||
IR |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
vishay |
2020+ |
N/A |
120 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
23+ |
SMD220 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
IR |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
IR/VISH |
24+ |
65230 |
询价 |
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