Legacy Power Discretes & Modules

Microchip

微芯科技

N-Channel Power MOSFETs, 5.5A, 350 V/400V

ONSEMI

安森美半导体

N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：177.13 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

AUTOMOTIVE MOSFET

VDSS= 55V RDS(on)= 8.0mΩ ID= 75A

文件：239.06 Kbytes 页数：9 Pages

IRF

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fa

文件：375 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET짰 Power MOSFET

VDSS= 55V RDS(on)= 8.0mΩ ID= 75A

文件：186.29 Kbytes 页数：10 Pages

IRF

N-Channel MOSFET Transistor

文件：338.54 Kbytes 页数：2 Pages

ISC

无锡固电

FULLY AVALANCHE RATED

文件：273.26 Kbytes 页数：9 Pages

IRF

FULLY AVALANCHE RATED

文件：273.26 Kbytes 页数：9 Pages

IRF