isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fa

文件：375 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET짰 Power MOSFET

VDSS= 55V RDS(on)= 8.0mΩ ID= 75A

文件：186.29 Kbytes 页数：10 Pages

IRF

FULLY AVALANCHE RATED

文件：273.26 Kbytes 页数：9 Pages

IRF

Analog CMOS Integrated Circuits

文件：481.41 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)