N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low Input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

文件：208.64 Kbytes 页数：5 Pages

Samsung

三星

5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：58.19 Kbytes 页数：7 Pages

Intersil

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

文件：146.64 Kbytes 页数：7 Pages

IRF

N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：177.13 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current ID=5.5A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) • Fast Switching Speed APPLICATIONS • High voltage,high speed applications • Off-line switching power supplies , UPS,AC and DC motor co

文件：59.62 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：848.7 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF330-333/IRF730-733 MTM/MTP5N35/5N40 N-Channel Power MOSFETs

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：848.7 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF330-333/IRF730-733 MTM/MTP5N35/5N40 N-Channel Power MOSFETs

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：848.7 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL POWER MOSFET

文件：96.83 Kbytes 页数：3 Pages

SEME-LAB

Seme LAB

HiRel MOSFETs

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Infineon

英飞凌