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IRF330中文资料Intersil数据手册PDF规格书

PDF无图
厂商型号

IRF330

功能描述

5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

文件大小

58.19 Kbytes

页面数量

7

生产厂商

Intersil

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-12 12:14:00

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IRF330规格书详情

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

特性 Features

• 5.5A, 400V

• rDS(ON) = 1.000Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

产品属性

  • 型号:

    IRF330

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-204AA

  • 功能描述:

    TRANS MOSFET N-CH 400V 5.5A 2PIN TO-204AA - Bulk

  • 功能描述:

    N CH MOSFET, 400V, 5.5A, TO-204AA; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    5.5A; Drain Source Voltage

  • Vds:

    400V; On Resistance

  • Rds(on):

    1ohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    4V; No. of

  • Pins:

    2 ;RoHS

  • Compliant:

    No

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IR
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IR
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12500
全新原装,现货库存长期供应
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IR
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VBSEMI/台湾微碧
23+
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50000
全新原装正品现货,支持订货
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IR
24+
TO-3
10000
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