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IRF1404ZPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

文件:329.6 Kbytes 页数:12 Pages

IRF

IRF1404ZPBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

文件:307.88 Kbytes 页数:12 Pages

IRF

IRF1404ZS

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件:4.6855 Mbytes 页数:12 Pages

KERSEMI

IRF1404ZS

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

文件:306.06 Kbytes 页数:12 Pages

IRF

IRF1404ZS_L

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件:4.6855 Mbytes 页数:12 Pages

KERSEMI

IRF1404ZSPBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

文件:307.88 Kbytes 页数:12 Pages

IRF

IRF1404ZSPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

文件:329.6 Kbytes 页数:12 Pages

IRF

IRF1404ZSTRLPBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

文件:307.88 Kbytes 页数:12 Pages

IRF

IRF1404ZGPBF

HEXFET짰 Power MOSFET

文件:291.97 Kbytes 页数:10 Pages

IRF

IRF1404ZL

Advanced Process Technology

文件:294.32 Kbytes 页数:12 Pages

IRF

技术参数

  • OPN:

    IRF1404ZPBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    40 V

  • RDS (on) @10V max:

    3.7 mΩ

  • ID @25°C max:

    180 A

  • QG typ @10V:

    100 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
25+
TO-220
18000
原厂直接发货进口原装
询价
IR
24+
原厂封装
2000
原装现货假一罚十
询价
IR
24+
TO-220AB
8866
询价
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
询价
IR
24+
TO-220AB
5000
全现原装公司现货
询价
IR
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
18+
TO-220AB
41200
原装正品,现货特价
询价
IR
20+
TO-220AB
36900
原装优势主营型号-可开原型号增税票
询价
IR
24+
65230
询价
更多IRF1404Z供应商 更新时间2026-1-22 13:00:00