IRF1404技术资料参数贸易商无锡固电第3页-114ic电子网

首页 >IRF1404>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1404Z	文件：4.6855 Mbytes Page：12 Pages	AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 页数：12 Pages	KERSEMI	KERSEMI
IRF1404Z	文件：2.53346 Mbytes Page：6 Pages	N-Channel MOSFET ■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON) 文件：2.53346 Mbytes 页数：6 Pages	KEXIN 科信电子	KEXIN
IRF1404ZL	文件：4.6855 Mbytes Page：12 Pages	AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 页数：12 Pages	KERSEMI	KERSEMI
IRF1404ZL	文件：306.06 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：306.06 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZLPBF	文件：329.6 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZLPBF	文件：307.88 Kbytes Page：12 Pages	Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZPBF	文件：307.88 Kbytes Page：12 Pages	Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZPBF	文件：329.6 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZS	文件：306.06 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：306.06 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZS	文件：4.6855 Mbytes Page：12 Pages	AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 页数：12 Pages	KERSEMI	KERSEMI

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技术参数

OPN：
IRF1404PBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
40 V
RDS (on) @10V max：
4 mΩ
ID @25°C max：
202 A
QG typ @10V：
131 nC
Special Features：
Wide SOA
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市芯峰微电子科技有限公司	IRF1404	IR	17+	TO-220	3000	原装现货、工厂库存	询价
中天科工半导体（深圳）有限公司	IRF1404	IR	25+	TO220	20300	IR原装特价IRF1404即刻询购立享优惠#长期有货	询价
深圳市欧立现代科技有限公司	IRF1404	IR	24+	TO-263	8100	绝对原装现货,价格低,欢迎询购!	询价
柒号芯城电子商务(深圳)有限公司	IRF1404	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳瞄钧科技有限公司	IRF1404	IR	24+	TO-220	48650	原装正品特价现货(香港新加坡日本)	询价
深圳市得捷芯城科技有限公司	IRF1404	IR(国际整流器)	24+	N/A	7672	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市星佑电子有限公司	IRF1404	IR	06+	TO-220	10000	全新原装绝对有货	询价
深圳市弘为电子有限公司	IRF1404	IR	24+	原厂封装	3900	原装现货假一罚十	询价
深圳市一线半导体有限公司	IRF1404	IR	24+	TO-220AB	8866		询价
齐创科技(上海,北京,青岛)有限公司	IRF1404	IR	23+	TO-220	5000	原装正品,假一罚十	询价

更多IRF1404供应商更新时间2025-12-14 14:02:00

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