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IRFD120

PowerMOSFET(Vdss=100V,Rds(on)=0.27ohm,Id=1.3A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultip

IRF

International Rectifier

IRFD120

1.3A,100V,0.300Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFD120

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFD120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecomb

VishayVishay Siliconix

威世科技威世科技半导体

IRFD120

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFD120

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

VishayVishay Siliconix

威世科技威世科技半导体

IRFD120PBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultip

IRF

International Rectifier

IRFD120PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFE120

HEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersthe

IRF

International Rectifier

IRFE120

SimpleDriveRequirements

IRF

International Rectifier

供应商型号品牌批号封装库存备注价格
IR
22+
6000
终端可免费供样,支持BOM配单
询价
IR
23+
8000
专注配单,只做原装进口现货
询价
IR
23+
8000
专注配单,只做原装进口现货
询价
IR
23+
7000
询价
IR
24+
CDIP18
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
IR
23+
CDIP18
8560
受权代理!全新原装现货特价热卖!
询价
更多IRC120供应商 更新时间2025-7-14 14:00:00