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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
IRFF120	文件：325.84 Kbytes Page：7 Pages	6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET 6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa	Intersil Intersil Corporation	Intersil
IRFF120	文件：131.97 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-205AF) Description TheHEXFET®technologyisthekeytoInternationalRectifier’sHiReladvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance. TheHEXFE	IRF International Rectifier	IRF
IRFF120	文件：165.85 Kbytes Page：5 Pages	N-ChannelEnhancement-ModePowerMOSField-EffectTransistors 5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice	GESS GE Solid State	GESS
IRFF120	文件：156.74 Kbytes Page：3 Pages	6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET 6.0A,100V,0.300Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
IRFM120A	文件：269.29 Kbytes Page：7 Pages	IEEE802.3afCompatible IEEE802.3afCompatible FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10μA(Max.)@VDS=100V ❐LowerRDS(ON):0.155Ω(Typ.)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRFM120A	文件：725.8 Kbytes Page：6 Pages	AvalancheRuggedTechnology FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10μA(Max.)@VDS=100V ❐LowerRDS(ON):0.155Ω(Typ.)	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFM120A	文件：274.78 Kbytes Page：7 Pages	AvalancheRuggedTechnology IEEE802.3afCompatible FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10μA(Max.)@VDS=100V ❐LowerRDS(ON):0.155Ω(Typ.)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRFM120A	文件：930.12 Kbytes Page：6 Pages	N-Channel100-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
IRFM120A	文件：385.13 Kbytes Page：8 Pages	AdvancedPowerMOSFET	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
IRFM120ATF	文件：274.78 Kbytes Page：7 Pages	AvalancheRuggedTechnology IEEE802.3afCompatible FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10μA(Max.)@VDS=100V ❐LowerRDS(ON):0.155Ω(Typ.)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRC120	IR	22+		6000	终端可免费供样,支持BOM配单	询价
深圳市创新迹电子有限公司	IRC120	IR	23+		8000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	IRC120	IR	23+		8000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	IRC120	IR	23+		7000		询价
深圳市华来深电子有限公司	IRC12402226346-1008	IR	23+	CDIP18	8560	受权代理!全新原装现货特价热卖!	询价

更多IRC120供应商更新时间2025-7-22 14:00:00

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